@Article{FornariRaMoPeBeReAb:2016:PrPrBi,
               author = "Fornari, Celso Israel and Rappl, Paulo Henrique de Oliveira and 
                         Morelh{\~a}o, S. L. and Peixoto, T. R. F. and Bentmann, H. and 
                         Reinert, F. and Abramof, Eduardo",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Universidade de 
                         S{\~a}o Paulo (USP)} and {Universit{\"a}t W{\"u}rzburg} and 
                         {Universit{\"a}t W{\"u}rzburg} and {Universit{\"a}t 
                         W{\"u}rzburg} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)}",
                title = "Preservation of pristine Bi2Te3 thin film topological insulator 
                         surface after ex situ mechanical removal of Te capping layer",
              journal = "APL Materials",
                 year = "2016",
               volume = "4",
               number = "10",
                pages = "106107",
                month = "Oct.",
             abstract = "Ex situ analyses on topological insulator films require protection 
                         against surface contamination during air exposure. This work 
                         reports on a technique that combines deposition of protective 
                         capping just after epitaxial growth and its mechanical removal 
                         inside ultra-high vacuum systems. This method was applied to 
                         Bi2Te3 films with thickness varying from 8 to 170 nm. Contrarily 
                         to other methods, this technique does not require any sputtering 
                         or thermal annealing setups installed inside the analyzing system 
                         and preserves both film thickness and surface characteristics. 
                         These results suggest that the technique presented here can be 
                         expanded to other topological insulator materials.",
                  doi = "10.1063/1.4964610",
                  url = "http://dx.doi.org/10.1063/1.4964610",
                 issn = "2166-532X",
             language = "en",
        urlaccessdate = "27 abr. 2024"
}